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| BA682 / BA683 Vishay Semiconductors Band Switching Diodes Features * * * * * * Silicon Planar Diodes Low differential forward resistance e2 Low diode capacitance High reverse impedance Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9371 Applications * Band switching in VHF-tuners Mechanical Data Case: MiniMELF Glass case SOD80 Weight: approx. 31 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part BA682 BA683 Type differentiation VR = 35 V, rf at IF 3 mA = max 0.7 VR = 35 V, rf at IF 3 mA = max 1.2 Ordering code BA682-GS18 or BA682-GS08 BA683-GS18 or BA683-GS08 Remarks Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Forward continuous current Test condition Symbol VR IF Value 35 100 Unit V mA Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Junction to ambient air Junction temperature Storage temperature range Test condition on PC board 50 mm x 50 mm x 1.6 mm Symbol RthJA Tj Tstg Value 500 150 - 55 to +150 Unit K/W C C Document Number 85530 Rev. 1.5, 16-Mar-06 www.vishay.com 1 BA682 / BA683 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Diode capacitance Test condition IF = 100 mA VR = 20 V f = 100 MHz, VR = 1 V f = 100 MHz, VR = 3 V Differential forward resistance f = 200 MHz, IF = 3 mA f = 200 MHz, IF = 10 mA BA682 BA683 BA682 BA683 BA682 BA683 Part Symbol VF IR CD CD CD rf rf rf rf Min Typ. Max 1000 50 1.5 1.25 1.2 0.7 1.2 0.5 0.9 Unit mV nA pF pF pF Typical Characteristics Tamb = 25 C, unless otherwise specified r f - Differential Forward Resistance () 100 f = 200 MHz T j = 25 C 10 BA 683 1 BA 682 0.1 0.1 1 10 100 94 9074 I F - Forward Current (mA) Figure 1. Differential Forward Resistance vs. Forward Current 3.0 C D - Diode Capacitance (pF) 2.5 2.0 1.5 f = 200 MHz T j = 25 C BA 682 1.0 BA 683 0.5 0 0.1 1 10 100 94 9075 VR - Reverse Voltage (V) Figure 2. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 Document Number 85530 Rev. 1.5, 16-Mar-06 BA682 / BA683 Vishay Semiconductors Package Dimensions in mm (Inches) Cathode indification 0.47 max. (0.019) 3.7 (0.146) 3.3 (0.130) foot print recommendation: 2.5 (0.098) max 1.6 (0.063) 1.4 (0.055) 1.25 (0.049) min 2.0 (0.079) min 5.0 (0.197) ref Document no.: 6.560-5005.01-4 Rev. 7 - Date: 07.February.2005 96 12070 Document Number 85530 Rev. 1.5, 16-Mar-06 www.vishay.com 3 BA682 / BA683 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85530 Rev. 1.5, 16-Mar-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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